2008. 3. 11 1/2 semiconductor technical data ktd1028 epitaxial planar npn transistor revision no : 3 high current application. features high dc current gain : h fe =800 3200 (v ce =5.0v, i c =300ma). wide area of safe operation. low collector saturation voltage. : v ce(sat) =0.17v (i c =500ma, i b =5.0ma). maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 8 v collector current i c 1.0 a base current i b 200 ma collector power dissipation p c 1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 100 na emitter cut-off current i ebo v eb =8v, i c =0 - - 100 na dc current gain h fe (1) (note) v ce =5.0v, i c =300ma 800 1500 3200 h fe (2) v ce =5.0v, i c =1.0a 400 - - collector-emitter saturration voltage v ce(sat) i c =500ma, i b =5.0ma - 0.17 0.30 v base-emitter saturation voltage v be(sat) i c =500ma, i b =5.0ma - 0.80 1.2 v collector output capacitance c ob v cb =10v, i e =0, f=1.0mhz - 18 30 pf transition frequency f t v ce =10v, i c =500ma 150 250 - mhz base-emitter voltage v be v ce =5v, i c =100ma - 630 700 mv note: h fe classification a:800 1600, b:1200 2400, c:2000 3200
2008. 3. 11 2/2 ktd1028 revision no : 3
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